MT40A512M16LY-062E AAT:E vs K4A8G165WG-BCWE Comparison

Detailed side-by-side comparison of MT40A512M16LY-062E AAT:E by Micron Technology and K4A8G165WG-BCWE by Samsung Electro-Mechanics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16LY-062E AAT:E MT40A512M16LY-062E AAT:E - 8Gbit DDR4 SDRAM 1.6GHz | Micron

MT40A512M16LY-062E AAT:E - 8Gbit DDR4 SDRAM 1.6GHz | Micron

MT40A512M16LY-062E AAT:E ✓ Active
Samsung Electro-Mechanics
K4A8G165WG-BCWE K4A8G165WG-BCWE - 8Gb DDR4 SDRAM x16 3200Mbps | Samsung

K4A8G165WG-BCWE - 8Gb DDR4 SDRAM x16 3200Mbps | Samsung

K4A8G165WG-BCWE ✓ Active

Specification Comparison

Parameter MT40A512M16LY-062E AAT:E K4A8G165WG-BCWE
Brand Micron Technology Samsung Electro-Mechanics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $9.20 $29.53
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 8 Gbit (1 GB) 8 Gbit
Memory Organization 512M x 16 512M x 16
Interface Parallel —
Clock Frequency 1.6 GHz —
Access Time 19 ns —
Supply Voltage 1.2 V 1.2 V
Speed Grade 062E —
Package 96-FBGA (7.5 x 13.5 mm) FBGA-96
Mounting Type Surface Mount Surface Mount
Operating Temperature [DATA_NEEDED: operating temperature range] —
Package Height [DATA_NEEDED: package max height] —
MSL Rating [DATA_NEEDED: moisture sensitivity level] —
Ordering Code Suffix AAT:E (temperature/package option per Micron code) —
RoHS Status Compliant Compliant
Moisture Packaging [DATA_NEEDED: packing type for AAT:E suffix] —
Data Rate Class DDR4-3200 (062E speed bin) —
Data Rate — 3200 Mbps
Operating Temperature Range — 0°C to +85°C
Operating Current — 20 mA
Memory Interface — Parallel
Row Cycle Time (tRC) — 19 ns
Technology — B-die
Lead-Free — Yes
Lifecycle Status — Active

Datasheets & Resources

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